Contact structures

ABSTRACT

The present disclosure relates to semiconductor structures and, more particularly, to contact structures and methods of manufacture. The method includes: recessing an isolation region between adjacent gate structures and below metallization overburden of source/drain metallization; planarizing the metallization overburden to a level of the adjacent gate structures; and forming source/drain contacts to the source/drain metallization, on sides of and extending above the adjacent gate structures.

FIELD OF THE INVENTION

The present disclosure relates to semiconductor structures and, more particularly, to contact structures and methods of manufacture.

BACKGROUND

Middle of line (MOL) processes are one key determinant of device yield. The MOL processes include, for example, cobalt metallization and source/drain contact formation.

The cobalt metallization and source/drain contact formation processes, though, pose several challenges as technologies scale downwards. For example, cobalt metallization poses a significant challenge due to difficulties in controlling polishing processes, e.g., chemical mechanical polishing (CMP). Specifically, CMP processes for cobalt material are not highly selective, which results in poor process control. This poor process control, in turn, causes local thinning (e.g., lack of uniformity) of a sacrificial cap material that protects the gate material. The poor process control can also result in punch through of the sacrificial capping material, landing on the gate material. This will expose the gate material resulting in a shorting to subsequently formed source/drain contacts.

SUMMARY

In an aspect of the disclosure, a method comprises: recessing an isolation region between adjacent gate structures and below metallization overburden of source/drain metallization; planarizing the metallization overburden to a level of the adjacent gate structures; and forming source/drain contacts to the source/drain metallization, on sides of and extending above the adjacent gate structures.

In an aspect of the disclosure, a method comprises: removing dielectric material that is above a surface of gate structures and within cobalt overburden of source/drain metallization features; planarizing the cobalt overburden to a capping material of the gate structures, after the removing of the dielectric material; depositing interlevel dielectric material on the capping material and the source/drain metallization features; and forming source/drain contacts to the source/drain metallization features within the interlevel dielectric material, on sides of an extending above the gate structures.

In an aspect of the disclosure, a structure comprises: a plurality of gate structures each of which include a capping material; source and drain regions adjacent to the plurality of gate structures; cobalt contacts between the plurality of gate structures and extending to and in electrical contact with the source and drain regions; an isolation material between adjacent gate structures of the plurality of gate structures; a stepped feature in the capping material of the adjacent gate structures; dielectric material in the stepped feature and above the capping material of the plurality of gate structures; and source and drain contacts in the dielectric material and contacting the cobalt contacts.

BRIEF DESCRIPTION OF THE DRAWINGS

The present disclosure is described in the detailed description which follows, in reference to the noted plurality of drawings by way of non-limiting examples of exemplary embodiments of the present disclosure.

FIG. 1 shows an incoming structure with gate structures, amongst other features, and respective fabrication processes in accordance with aspects of the present disclosure.

FIG. 2 shows a recess between gate structures, amongst other features, and respective fabrication processes in accordance with aspects of the present disclosure.

FIG. 3 shows planarized gate structures and contact material, amongst other features, and respective fabrication processes in accordance with aspects of the present disclosure.

FIG. 4 shows an interlevel dielectric material over the gate structures, amongst other features, and respective fabrication processes in accordance with aspects of the present disclosure.

FIG. 5 shows source and drain contacts, amongst other features, and respective fabrication processes in accordance with aspects of the present disclosure.

DETAILED DESCRIPTION

The present disclosure relates to semiconductor structures and, more particularly, to contact structures and methods of manufacture. More specifically, the present disclosure provides a method to remove interlevel dielectric material selectively to Co and subsequently remove the Co overburden by a chemical mechanical polishing (CMP). Advantageously, the method to remove the Co overburden will result in minimal cap erosion.

The contact structures of the present disclosure can be manufactured in a number of ways using a number of different tools. In general, though, the methodologies and tools are used to form structures with dimensions in the micrometer and nanometer scale. The methodologies, i.e., technologies, employed to manufacture the contact structures of the present disclosure have been adopted from integrated circuit (IC) technology. For example, the structures are built on wafers and are realized in films of material patterned by photolithographic processes on the top of a wafer. In particular, the fabrication of the contact structures uses three basic building blocks: (i) deposition of thin films of material on a substrate, (ii) applying a patterned mask on top of the films by photolithographic imaging, and (iii) etching the films selectively to the mask.

FIG. 1 shows an incoming structure with gate structures, amongst other features, in accordance with aspects of the present disclosure. More specifically, the incoming structure 10 includes a plurality of gate structures 14 formed on an underlying substrate 12. In embodiments, the substrate 12 can be any suitable semiconductor material including, but not limited to, Si, SiGe, SiGeC, SiC, GaAs, InAs, InP, and other III/V or II/VI compound semiconductors. The substrate 12 can be representative of planar structure or a fin structure formed by conventional sidewall imaging techniques (SIT) such that no further explanation is required herein for an understanding of the present disclosure. Also, the substrate 12 can be representative of a bulk material, e.g., Si, or semiconductor on insulator (SOI) technologies, for either planar or finFET technologies. In addition, the plurality of gate structures 14 can be formed by conventional replacement gate processes such that no further explanation is required herein for an understanding of the present disclosure.

Still referring to FIG. 1, the plurality of gate structures 14 can include sidewall spacers 14 a composed of, e.g., SiN materials. The gate structures 14 further include a high-k gate dielectric material 14 b on the sidewall spacers 14 a and bottom of trenches (formed by removal of dummy gate structures). In embodiments, the high-k dielectric gate material 14 b can be hafnium based dielectrics, as an example. In further embodiments, examples of such high-k dielectrics include, but are not limited: Al₂O₃, Ta₂O₃, TiO₂, La₂O₃, SrTiO₃, LaAlO₃, ZrO₂, Y₂O₃, Gd₂O₃, and combinations including multilayers thereof.

A gate material 14 c, e.g., doped polysilicon, is deposited over the high-k dielectric gate material 14 b. In addition, the gate structures 14 can be capped with a sacrificial capping material 14 d. In embodiments, the sacrificial capping material 14 d can be SiN material, which is deposited to protect the underlying gate material 14 c during subsequent source/drain contact fabrication processes. Source/drain regions 16 are formed on sides of the gate structures 14. In embodiments, the source/drain regions 16 can be raised epitaxial material, e.g., semiconductor material such as Si or SiGe, doped with impurities.

The source/drain regions 16 can undergo a silicide process for contact formation. As should be understood by those of skill in the art, the silicide process begins with deposition of a thin transition metal layer, e.g., nickel, cobalt or titanium, over fully formed and patterned semiconductor devices (e.g., doped or ion implanted source and drain regions 16). After deposition of the material, the structure is heated allowing the transition metal to react with exposed silicon (or other semiconductor material as described herein) in the active regions of the semiconductor device (e.g., source, drain, gate contact region) forming a low-resistance transition metal silicide. Following the reaction, any remaining transition metal is removed by chemical etching, leaving silicide contacts in the active regions of the device. It should be understood by those of skill in the art that silicide contacts will not be required on the devices, when a gate structure is composed of a metal material.

FIG. 1 further shows a liner 18 formed over the gate structures 14 and the source/drain regions 16. In embodiments, the liner 18 is a TiN liner which can be deposited by a Plasma Enhanced Vapor Deposition (PEVD) process. The liner 18 will be deposited over the sidewall spacers 14 a, the sacrificial capping material 14 d and the source and drain regions 16. The remaining spaces between the plurality of gate structures 14 can be filled with metal contact material 22. For example, the metal contact material 22 can be Cobalt (Co), deposited by a conventional deposition process, e.g., chemical vapor deposition (CVD) processes. In embodiments, as shown in FIG. 1, the deposition process will result in overburden 22′ of the metal contact material 22, e.g., metal material above the gate structures 14.

An isolation region (interlevel dielectric material) 20 is formed between two adjacent gate structures 14′ (extending into the overburden 22′ above the gate structures 14). In embodiments, the adjacent gate structures 14′ can be dummy gate structures. The isolation region 20 may include, e.g., a shallow trench isolation region 20 a formed prior to the replacement gate structures 14, 14′. The isolation region 20 can be composed of oxide material with a liner 20 b composed of SiN, for example.

In embodiments, the isolation region 20 can be formed by conventional lithography, etching and deposition methods known to those of skill in the art. For example, a resist formed over the metal contact material 22 is exposed to energy (light) to form a pattern (opening). An etching process with a selective chemistry, e.g., reactive ion etching (RIE), will be used to form one or more trenches in the metal contact material 22 through the openings of the resist. The resist can then be removed by a conventional oxygen ashing process or other known stripants. Following the resist removal, the liner 20 b and insulator material can be deposited by any conventional deposition processes, e.g., chemical vapor deposition (CVD) processes. Any residual material on the surface of the metal contact material 22 can be removed by conventional chemical mechanical polishing (CMP) processes.

In FIG. 2, portions of the isolation region 20 are removed (recessed) by a selective etching process. More specifically, the selective etching process can be a low or zero bias CF₄, CHF₃, CH₂F₂, CH₃F plasma or plasma with mixture of the gases, which selectively etches or recesses the material of the isolation region 20, e.g., SiO₂ and SiN material, to form a recess 24. In embodiments, the etching process will also remove portions of the sacrificial capping material 14 d, which contributes to the recess 24. In embodiments, the recess 24 is below the surface of the sacrificial capping material 14 d, e.g., approximately in the range of 5 nm to about 30 nm. It should be noted, though, that the selective etching process will not expose any of the underlying gate material 14 c.

As further shown in FIG. 3, the metal contact material 22 and the liner 18 undergo a polishing process, stopping on the sacrificial capping material 14 d. In more specific embodiments, the metal contact material 22 and the liner 18 undergo a selective CMP process, which will not erode the sacrificial capping material 14 d. In this way, the sacrificial capping material 14 d will remain over the gate material 14 c, preventing it from being exposed and causing shorting in subsequent source/drain contract fabrication processes.

In FIG. 4, an interlevel dielectric layer 20′ is deposited over the sacrificial capping material 14 d and within remaining portions of the recess 24. In embodiments, the interlevel dielectric layer 20′ is an oxide material, e.g., SiO₂, deposited by a conventional deposition method. For example, the interlevel dielectric layer 20′ can be deposited by a CVD process. As shown in FIG. 4, the interlevel dielectric layer 20′ within the recess forms a stepped feature 24′ with the adjacent gate structures 14′.

FIG. 5 shows source and drain contacts 26 in the interlevel dielectric layer 20′, extending to and contacting with the metal contact material 22, e.g., Co. In embodiments, the source and drain contacts 26 can be any appropriate material including, e.g., tungsten or aluminum, lined with TiN, Ta, TaN, etc. The source and drain contacts 26 can be formed by conventional lithography, etching, deposition and planarization processes. For example, a resist formed over the interlevel dielectric layer 20′ is exposed to energy (light) to form a pattern (opening), aligned with and exposing the metal contact material 22 over the source/drain regions 16. An etching process with a selective chemistry, e.g., RIE, will be used to form one or more trenches in the interlevel dielectric layer 20′ through the openings of the resist. The resist can then be removed by a conventional oxygen ashing process or other known stripants. Following the resist removal, the conductive material can be deposited by any conventional deposition processes, e.g., CVD processes. Any residual material on the surface of the interlevel dielectric layer 20′ can be removed by conventional chemical mechanical polishing (CMP) processes.

The method(s) as described above is used in the fabrication of integrated circuit chips. The resulting integrated circuit chips can be distributed by the fabricator in raw wafer form (that is, as a single wafer that has multiple unpackaged chips), as a bare die, or in a packaged form. In the latter case the chip is mounted in a single chip package (such as a plastic carrier, with leads that are affixed to a motherboard or other higher level carrier) or in a multichip package (such as a ceramic carrier that has either or both surface interconnections or buried interconnections). In any case the chip is then integrated with other chips, discrete circuit elements, and/or other signal processing devices as part of either (a) an intermediate product, such as a motherboard, or (b) an end product. The end product can be any product that includes integrated circuit chips, ranging from toys and other low-end applications to advanced computer products having a display, a keyboard or other input device, and a central processor.

The descriptions of the various embodiments of the present disclosure have been presented for purposes of illustration, but are not intended to be exhaustive or limited to the embodiments disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the described embodiments. The terminology used herein was chosen to best explain the principles of the embodiments, the practical application or technical improvement over technologies found in the marketplace, or to enable others of ordinary skill in the art to understand the embodiments disclosed herein. 

What is claimed:
 1. A method comprising: partially recessing an isolation region between adjacent gate structures, capping material over edges of the adjacent gate structures and below metallization overburden of source/drain metallization, planarizing the metallization overburden to a level of the adjacent gate structures, while maintaining a recessed portion of the capping material of the adjacent gate structures which has not been removed and of the isolation region of the adjacent gate structures below the planarized metallization overburden; and forming source/drain contacts to the source/drain metallization, on sides of and extending above the adjacent gate structures.
 2. The method of claim 1, wherein the recessing of the isolation region is a selective etching process which does not erode the metallization overburden of the source/drain metallization.
 3. The method of claim 2, wherein the metallization overburden is cobalt.
 4. The method of claim 3, wherein the selective etching is a low or zero bias CF₄, CHF₃, CH₂F₂, CH₃F plasma or plasma with mixture of the gases which selectively etches the isolation region to the cobalt.
 5. The method of claim 2, wherein the recessing partly removes the capping material of the adjacent gate structures.
 6. The method of claim 1, wherein the planarizing is a chemical mechanical polishing (CMP) of the metallization overburden, which stops on the capping material on the adjacent gate structures and other gate structures, wherein the metallization overburden is cobalt overburden.
 7. The method of claim 6, wherein the CMP is selective to the capping material.
 8. The method of claim 7, wherein the capping material is a nitride material that protects underlying gate material.
 9. The method of claim 7, wherein the forming of the source/drain contacts comprises: depositing dielectric material in the recess and above the adjacent gate structures and the other gate structures; forming openings in the dielectric material, exposing the source/drain metallization between the adjacent gate structures and the other gate structures; and depositing metal material within the opening, contacting the source/drain metallization.
 10. The method of claim 1, wherein the recessing and the planarizing form a stepped feature in the capping material of the adjacent gate structures which is filled with isolation material.
 11. A method comprising: forming a recess in dielectric material and capping material of gate structures by: removing the dielectric material that is above a surface of the gate structures and within cobalt overburden of source/drain metallization features; removing liner material that is above and between adjacent gate structures of the gate structures; and partially removing edges of the capping material of the adjacent gate structures; planarizing the cobalt overburden to the capping material of the gate structures which has not been removed, after the removing of the dielectric material, the liner material and the edges of the capping material; depositing interlevel dielectric material on the capping material and the source/drain metallization features; and forming source/drain contacts to the source/drain metallization features within the interlevel dielectric material, on sides of an extending above the gate structures, wherein the planarizing of the cobalt overburden reduces a height of the recess between the adjacent gate structures, which includes at least the removed edges of the capping material.
 12. The method of claim 11, wherein the removing of the dielectric material is a selective etching process.
 13. The method of claim 12, wherein the selective etching process is a low or zero bias CF₄, CHF₃, CH₂F₂, CH₃F plasma or plasma with mixture of the gases which selectively etches the dielectric material to below a surface of the capping material of the gate structures.
 14. The method of claim 11, wherein the planarizing is a chemical mechanical polishing (CMP) of the cobalt overburden, which stops on the capping material of the gate structures.
 15. The method of claim 14, wherein the CMP is selective to the capping material.
 16. The method of claim 14, wherein the capping material is a nitride material that protects underlying gate material.
 17. The method of claim 11, wherein the depositing of the interlevel dielectric material is deposited within a stepped feature formed in the capping material.
 18. The method of claim 17, wherein the stepped feature is formed by recessing part of the capping material between the adjacent gate structures during the removal of the dielectric material.
 19. The method of claim 18, wherein the recessing is about 5 nm to about 30 nm below the top of the capping material.
 20. The method of claim 11, wherein the dielectric material is an oxide material which is selectively removed to cobalt material. 